A field-effect transistor whose gate stack includes a ferroelectric layer (modern devices use doped hafnium oxide). The polarisation state of the ferroelectric shifts the transistor threshold voltage, so the device itself stores a non-volatile bit (or multiple levels), switched by an electric field at very low energy. Distinct from FeRAM (Ferroelectric), which stores charge in a separate ferroelectric capacitor.
Why it matters for compute
Limitations
Endurance (polarisation fatigue over write cycles), retention, device-to-device variability, and scaling of the ferroelectric film thickness. These are why FeFET, like the rest of Analog In-Memory Compute, is not yet a settled volume technology.
Cluster role
Hand-authored synthesis, 16 June 2026.