Electronics exploiting the electron’s spin (and spin-orbit coupling) rather than only its charge. Underpins MRAM (magnetic tunnel junctions, STT/SOT switching), magnetic sensors (TMR), and the beyond-CMOS logic programs (spin-orbit logic / MESO, ferroelectric spin-orbit / FESO, spin-wave/magnonic logic). European base: CEA-Spintec (Grenoble) + Laboratoire Albert Fert; funded by France 2030 PEPR SPIN (€38M). Memory is the commercialised beachhead (MRAM (STT/SOT-MRAM)); logic remains TRL 2-4. See Beyond Cmos Device Layer.
Spintronics
Cross-cuts: Compute