Physics / mechanism
MOCVD (Metal-Organic Chemical Vapour Deposition) and MBE (Molecular Beam Epitaxy) are the two dominant epitaxial growth techniques for compound semiconductors. MOCVD flows metal-organic precursors (e.g. TMGa, TMIn) plus hydrides (AsH₃, PH₃) over a heated substrate; pyrolysis drives layer-by-layer deposition. MBE evaporates elemental sources in ultra-high vacuum (~10⁻¹⁰ Torr), enabling monolayer control via shuttered beams. Key parameters: growth rate (0.1–10 µm/hr), doping precision (≤10¹⁶ cm⁻³ background), interface abruptness (<1 monolayer), and wafer uniformity (±1–2% thickness across 6”). MOCVD dominates production (GaN LEDs, HEMTs, VCSELs, HBTs); MBE dominates R&D and quantum-layer structures where purity and abruptness are non-negotiable.
Competitive landscape
MOCVD vs MBE is not really competitive—they occupy different niches—but both face pressure from alternative deposition approaches.
Companies using
Connected ideas
Sources
Frontier (open questions)
- To be added.